********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Dec 22, 2014
*ECN S14-2486, Rev. A
*File Name: Si4491EDY_PS.txt and Si4491EDY_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si4491EDY D G S 
x1  D G S Si4491EDY_mos
x2  G S   Si4491EDY_esd
.ENDS Si4491EDY
.SUBCKT Si4491EDY_mos D G S 
M1 3 GX S S PMOS W= 14290000u L= 0.3u 
M2 S GX S D NMOS W= 14290000u L= 0.52u 
R1 D 3 3.91e-03 TC=3.966e-03,-1.607e-07
CGS GX S 1.469e-09 
CGD GX D 1.918e-10 
RG G GY 1m 
RTCV 100 S 1e6 TC=-.165e-03,3.952e-06
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 14290000u 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 6.5e-8 
+ RS = 0 KP = 1.804e-06 NSUB = 2.819e+16 
+ KAPPA = 1.040e-03 NFS = 5.200e+11 
+ LD = 0 IS = 0 TPG = -1    )
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 6.5e-8 
+NSUB = 1.363e+16 IS = 0 TPG = -1    )
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 3.954e-08 T_measured = 25 BV = 31
+RS = 4.530e-02 N = 1.101e+00 IS = 2.172e-12 
+EG = 1.222e+00 XTI = 1.012e+00 TRS1 = 3.719e-03
+CJO = 2.949e-11 VJ = 5.557e-01 M = 6.046e-01 ) 
.ENDS Si4491EDY_mos
.subckt Si4491EDY_esd 2 1
r1 1 9 1.000e+04 TC=-4.000e-05
d1 2 9 dleak 
.MODEL dleak d (IS = 1.5e-09 XTI = 1.900e+03 EG = 1.17 
+ T_measured = 25 TBV1 = 0 N = 1.300e+02 BV = 50)
r2 1 10 4.083e+02 TC=-4.000e-03
d3 11 10 dout 
d4 11 2 dout 
.MODEL dout D (IS = 2.578e-08 XTI = 1.561e+02 EG = 1.17 
+ T_measured = 25 TBV1 = 0.00018 N = 15 BV = 27.1
.ends Si4491EDY_esd